Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IHW30N120R5XKSA1

IHW30N120R5XKSA1

IHW30N120R5XKSA1

Infineon Technologies

IHW30N120R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N120R5XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-40°C~175°C TJ
Series TrenchStop™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 330W
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge235nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/330ns
Switching Energy 1.1mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:2275 items

Pricing & Ordering

QuantityUnit PriceExt. Price
240$2.95188$708.4512

IHW30N120R5XKSA1 Product Details

IHW30N120R5XKSA1 Features

Powerful monolithic body diode with a low forward voltage

designed for soft commutation

TRENCHSTOPTM technology offering:

- very tight parameter distribution

- high ruggedness, stable temperature behavior

- low VcEsat

- easy parallel switching capability due to positive

temperature coefficient in VcEsat

Low EMI

Qualified according to JESD-022 for target applications

Pb-free lead plating; RoHS compliant

Halogen-free (according to IEC 61249-2-21)



IHW30N120R5XKSA1 Applications

Induction cooking

Microwave ovens




Get Subscriber

Enter Your Email Address, Get the Latest News