IKW15N120H3FKSA1 Description
The IKW15N120H3FKSA1 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behavior, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
IKW15N120H3FKSA1 Features
Halogen-free
Green product
Short-circuit capability
Excellent performance
Very good EMI behaviour
Low switching and conduction losses
Low switching losses for high efficiency
Best-in-class IGBT efficiency and EMI behaviour
Fast switching behavior with low EMI emissions
Small gate resistor for reduced delay time and voltage overshoot
Packaged with and without freewheeling diode for increased design freedom
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour
Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
IKW15N120H3FKSA1 Applications
Power Management
Alternative Energy
