IGW40N120H3FKSA1 Description
IGW40N120H3FKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW40N120H3FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW40N120H3FKSA1 has the common source configuration.
IGW40N120H3FKSA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IGW40N120H3FKSA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
