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STGP10NB60SD

STGP10NB60SD

STGP10NB60SD

STMicroelectronics

STGP10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP10NB60SD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation80W
Current Rating20A
Base Part Number STGP10
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation3.5W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time700 ns
Power - Max 80W
Transistor Application POWER CONTROL
Rise Time460ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 1.2 μs
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 29A
Reverse Recovery Time 37 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Drain to Source Breakdown Voltage 600V
Turn On Time1160 ns
Test Condition 480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Turn Off Time-Nom (toff) 3100 ns
Gate Charge33nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5160 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.902867$0.902867
10$0.851761$8.51761
100$0.803549$80.3549
500$0.758065$379.0325
1000$0.715155$715.155

STGP10NB60SD Product Details

STGP10NB60SD Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low-frequency application (<1kHz)



STGP10NB60SD Features

HIGH CURRENT CAPABILITY

HIGH INPUT IMPEDANCE(NOLTAGEDRIVEN)



STGP10NB60SD Applications

LIGHT DIMMER

STATIC RELAYs

MOTOR CONTROL


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