Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FGY75N60SMD

FGY75N60SMD

FGY75N60SMD

ON Semiconductor

FGY75N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGY75N60SMD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Weight 7.629g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation750W
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Power - Max 750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.9V
Turn On Time76 ns
Test Condition 400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A
Turn Off Time-Nom (toff) 161 ns
IGBT Type Field Stop
Gate Charge248nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 24ns/136ns
Switching Energy 2.3mJ (on), 770μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 29ns
Height 20.32mm
Length 15.87mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2301 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.48000$6.48
10$5.86900$58.69
450$4.68751$2109.3795
900$4.29376$3864.384

FGY75N60SMD Product Details

FGY75N60SMD Description

The FGY75N60SMD is a 1000V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inventoried microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lowers switching losses during the turn-off instant. However, since it doesn't include an intrinsic body diode in common with all other IGBT types of IGBTs, it is generally packaged with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.



FGY75N60SMD Features

Low saturation voltage

High input impedance

High-speed switching

Built-in fast recovery diode



FGY75N60SMD Applications

Power Management, Alternative Energy



Get Subscriber

Enter Your Email Address, Get the Latest News