FZ600R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FZ600R12KE3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
3
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X3
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2750W
Turn On Time
400 ns
Collector Current-Max (IC)
900A
Turn Off Time-Nom (toff)
830 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
2.15 V
RoHS Status
RoHS Compliant
In-Stock:4924 items
FZ600R12KE3 Product Details
FZ600R12KE3 Description
FZ600R12KE3 is a type of IGBT module. It has the following characteristic: Low switching losses, Unbeatable robustness, VCEsat with positive temperature coefficient, Package with CTI > 400, High creepage and clearance distances. It is suitable for Motor control and drives, Power converter and inverter for wind turbines, as well as Uninterruptible Power Supply (UPS).
FZ600R12KE3 Features
Low switching losses Unbeatable robustness VCEsat with positive temperature coefficient Package with CTI > 400 High creepage and clearance distances
FZ600R12KE3 Applications
Motor control and drives Power converter and inverter for wind turbines Uninterruptible Power Supply (UPS)
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