FZ2400R17KF6CB2S1NOSA1

FZ2400R17KF6CB2S1NOSA1 Description

FZ2400R17KF6CB2S1NOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FZ2400R17KF6CB2S1NOSA1 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 105A. The FZ2400R17KF6CB2S1NOSA1 has 35 pins and it is available in Module packaging way. FZ2400R17KF6CB2S1NOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FZ2400R17KF6CB2S1NOSA1 Features

• Operating Temperature: -40°C~150°C TJ

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A

• Input Capacitance (Cies) @ Vce: 37nF @ 25V

• Transistor Application: POWER CONTROL

FZ2400R17KF6CB2S1NOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial