FD800R33KL2CKB5NOSA1 Description
The FD800R33KL2CKB5NOSA1 is an IGBT Module N-CH 3.3KV 1.5KA. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
FD800R33KL2CKB5NOSA1 Features
Wide input voltage range, as boosters are included
Reactive power capability is supported
Simple assembly due to PressFIT pins (solderable)
Modular solution tailored for most inverter designs
Excellent efficiency and performance
High maximum DC voltages achievable
FD800R33KL2CKB5NOSA1 Applications
Battery chargers
Three-phase PFC input for various applications such as air conditioners, fans and many more
Single-phase photovoltaic inverters
Three-phase photovoltaic inverters
