FZ2400R17HP4B9HOSA2 Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.
FZ2400R17HP4B9HOSA2 Applications
·High Power Converters
·Motor Drives
FZ2400R17HP4B9HOSA2 Features
·Extended Operation Temperature Ty op
·Low VcEsat
·Tjop=150°℃
Mechanical Features
·4 kV AC 1min Insulation
·Package with CTI>400
·High Creepage and Clearance Distances
·High Power Density
·IHM B Housing
·Copper Base Plate
