FZ1600R17KF6CB2NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FZ1600R17KF6CB2NOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~125°C
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Configuration
2 Independent
Power - Max
12500W
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
2600A
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 1600A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
105nF @ 25V
RoHS Status
Non-RoHS Compliant
In-Stock:42 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1320.00000
$1320
500
$1306.8
$653400
1000
$1293.6
$1293600
1500
$1280.4
$1920600
2000
$1267.2
$2534400
2500
$1254
$3135000
FZ1600R17KF6CB2NOSA1 Product Details
FZ1600R17KF6CB2NOSA1 Description
FZ1600R17KF6CB2NOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 3300V from Infineon Technologies. FZ1600R17KF6CB2NOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1000A. The FZ1600R17KF6CB2NOSA1 has 7 pins and it is available in Module packaging way. FZ1600R17KF6CB2NOSA1 has a 3300V Voltage - Collector Emitter Breakdown (Max) value.
FZ1600R17KF6CB2NOSA1 Features
Voltage - Collector Emitter Breakdown (Max): 3300V
Collector Emitter Voltage (VCEO): 3.3kV
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
Input Capacitance (Cies) @ Vce: 190nF @ 25V
Operating Temperature: -40°C~150°C
FZ1600R17KF6CB2NOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Related Products
Similar Transistors - IGBTs - Modules from Infineon Technologies and other manufacturers
