FS35R12KE3GBOSA1 Description
FS35R12KE3GBOSA1 is a 1200v IGBT-Modules. The FS35R12KE3GBOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Industrial, Grid infrastructure, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS35R12KE3GBOSA1 is in the tray package with 200W Power dissipation.
FS35R12KE3GBOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 55A
Repetitive peak collector current Tp = 1 ms: 70A
Total power dissipation Tc = 25°C: 200W
Gate-emitter peak voltage: ±20V
FS35R12KE3GBOSA1 Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Grid infrastructure
Enterprise systems
Enterprise projectors
