FZ1200R12KF5NOSA1 Description
Infineon FZ1200R12KF5NOSA1 is an IGBT Dual, 1200A, 1200V Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.
Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch.
Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high-power applications.
FZ1200R12KF5NOSA1 Features
Industrial standard package
Medium Switching Speed
2500V Isolation
140mm Base Width
IGBT for Inverter
Pressure Contact Technology
Electrically insulated base plate
FZ1200R12KF5NOSA1 Applications
