FD1200R17KE3KNOSA1 Description
FD1200R17KE3KNOSA1 is a 1700v IGBT. The transistor FD1200R17KE3KNOSA1 can be applied in Automotive, Body electronics & lighting, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FD1200R17KE3KNOSA1 is in the tray package with 5kW Power dissipation.
FD1200R17KE3KNOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1700v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 1600A
Gate-emitter peak voltage: +/-20 V
The temperature under switching conditions Tvj op: -40 to 125 °C
Continuous DC forward current: 1200A
FD1200R17KE3KNOSA1 Applications
Automotive
Body electronics & lighting
Communications equipment
Datacom module
Personal electronics
Connected peripherals & printers
