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FZ1200R12HE4PHPSA1

FZ1200R12HE4PHPSA1

FZ1200R12HE4PHPSA1

Infineon Technologies

FZ1200R12HE4PHPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ1200R12HE4PHPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-PUFM-X7
Number of Elements 2
Configuration Single Switch
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1825A
Turn On Time660 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 1200A
Turn Off Time-Nom (toff) 1130 ns
IGBT Type Trench Field Stop
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 74nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:44 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$688.383000$688.383
10$649.417925$6494.17925
100$612.658419$61265.8419
500$577.979641$288989.8205
1000$545.263812$545263.812

FZ1200R12HE4PHPSA1 Product Details

FZ1200R12HE4PHPSA1 Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

FZ1200R12HE4PHPSA1 Applications

·High power converters

·Motor drives

FZ1200R12HE4PHPSA1 Features

·Extended operating temperature Tvjop

·Low switching losses

Mechanical Features

·Package with CTI>400·High power density

·IHM B housing

·RoHS compliant

·Pre-applied Thermal Interface Material


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