DF150R12RT4HOSA1 Description
DF150R12RT4HOSA1 developed by Infineon Technologies is a type of 34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the DF150R12RT4HOSA1 IGBT module provides optimum performance for motor drives, high-frequency switching applications, and UPS systems.
DF150R12RT4HOSA1 Features
Extended operation temperature Tvjop
Low switching losses
VCEsat with a positive temperature coefficient
Tvjop=150°C
Low VCEsat
DF150R12RT4HOSA1 Applications
High-frequency switching application
Motor drives
UPS systems
