FS600R07A2E3B32BOSA1 Description
FS600R07A2E3B32BOSA1 is a 650v IGBT. The transistor FS600R07A2E3B32BOSA1 can be applied in Automotive Applications, Hybrid Electrical Vehicles (H) EVs, Commercial Agriculture Vehicles, and Motor drive due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS600R07A2E3B32BOSA1 is in the Tray package with 20mW power dissipation.
FS600R07A2E3B32BOSA1 Features
Increased blocking voltage capability to 650V
High Current Density
Low inductive design
Low Switching Losses
Trench IGBT 3
Tvj op= 150°C
VcEsat with a positive Temperature Coefficient
FS600R07A2E3B32BOSA1 Applications
Automotive Applications
Hybrid Electrical Vehicles (H)EV
Commercial Agriculture Vehicles
Motor Drives
