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FS100R12KT4PBPSA1

FS100R12KT4PBPSA1

FS100R12KT4PBPSA1

Infineon Technologies

FS100R12KT4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS100R12KT4PBPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Surface MountNO
Transistor Element Material SILICON
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-XUFM-X25
Number of Elements 6
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Turn On Time185 ns
Turn Off Time-Nom (toff) 490 ns
Collector-Emitter Voltage-Max 1200V
RoHS StatusROHS3 Compliant
In-Stock:111 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$178.617000$178.617
10$168.506604$1685.06604
100$158.968494$15896.8494
500$149.970277$74985.1385
1000$141.481394$141481.394

FS100R12KT4PBPSA1 Product Details

FS100R12KT4PBPSA1 Description

FS100R12KT4PBPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS100R12KT4PBPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FS100R12KT4PBPSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FS100R12KT4PBPSA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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