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FS50R12U1T4BPSA1

FS50R12U1T4BPSA1

FS50R12U1T4BPSA1

Infineon Technologies

FS50R12U1T4BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS50R12U1T4BPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2017
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 26
ECCN Code EAR99
Additional FeatureUL APPROVED
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X26
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 90A
Turn On Time95 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn Off Time-Nom (toff) 590 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 100pF @ 25V
RoHS StatusRoHS Compliant
In-Stock:1647 items

FS50R12U1T4BPSA1 Product Details

FS50R12U1T4BPSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FS50R12U1T4BPSA1 Applications

·Air Conditioning

·Motor Drives

·Servo Drives

·UPS Systems

FS50R12U1T4BPSA1 Features

·Low Switching Losses

·Low VCEsat

·Trench IGBT 4

·VCEsatwith positive Temperature Coefficient

Mechanical Features

·AlzO Substrate with Low Thermal Resistance

·Compact design

·PressFIT Contact Technology

·Rugged Duplex frame construction


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