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APTGFQ25H120T2G

APTGFQ25H120T2G

APTGFQ25H120T2G

Microsemi Corporation

IGBT MODULE 1200V 40A 227W SP2

SOT-23

APTGFQ25H120T2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 29 Weeks
Mount Screw, Through Hole
Mounting Type Through Hole
Package / Case SP2
Number of Pins 22
Published 2012
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation227W
Number of Elements 1
Configuration Full Bridge
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance2.02nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
IGBT Type NPT and Fieldstop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 2.02nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:1030 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$59.44000$59.44
10$55.94500$559.45
25$52.44840$1311.21

About APTGFQ25H120T2G

The APTGFQ25H120T2G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT MODULE 1200V 40A 227W SP2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTGFQ25H120T2G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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