FS400R12A2T4IBPSA1 Description
The FS400R12A2T4IBPSA1 is a HybridPACK?2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
FS400R12A2T4IBPSA1 Features
Mechanical Features
Integrated NTC temperature sensor
Isolated Base Plate
Copper Base Plate
RoHS compliant
2.5 kV AC 1min Insulation
Direct Cooled Base Plate
High Power Density
Electrical Features
Trench IGBT 4
TVJOP = 150°C
VCESAT with positive Temperature Coefficient
Increased DC link Voltage
Low inductive design
Low Switching Losses
FS400R12A2T4IBPSA1 Applications
