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IFF600B12ME4B11BOSA1

IFF600B12ME4B11BOSA1

IFF600B12ME4B11BOSA1

Infineon Technologies

IFF600B12ME4B11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IFF600B12ME4B11BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~150°C
Series EconoDUAL™ 3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 20mW
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 600A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
IGBT Type Trench Field Stop
NTC ThermistorYes
RoHS StatusROHS3 Compliant
In-Stock:4625 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$256.106868$256.106868
10$247.685559$2476.85559
25$245.963812$6149.0953
50$244.254034$12212.7017
100$239.230200$23923.02
500$222.126462$111063.231

IFF600B12ME4B11BOSA1 Product Details

IFF600B12ME4B11BOSA1 Description


IFF600B12ME4B11BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IFF600B12ME4B11BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 600A. The IFF600B12ME4B11BOSA1 has 3 pins and it is available in Module packaging way. IFF600B12ME4B11BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



IFF600B12ME4B11BOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Current - Collector (Ic) (Max): 600A

  • Current - Collector Cutoff (Max): 3mA



IFF600B12ME4B11BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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