FP15R12KE3BOMA1 Description
FP15R12KE3BOMA1 is a IGBT-Module. The transistor FP15R12KE3BOMA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Datacom module, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP15R12KE3BOMA1 is in the tray package with 89W Power dissipation.
FP15R12KE3BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C : 27A
Repetitive peak collector current Tp = 1 ms: 30A
Total power dissipation Tc = 25°C: 89W
Gate-emitter peak voltage: ±20V
FP15R12KE3BOMA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Datacom module
Enterprise systems
Enterprise projectors
