FS25R12W1T4PBPSA1 Description
FS25R12W1T4PBPSA1 developed by Infineon Technologies belongs to the family of IGBT modules. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS25R12W1T4PBPSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High-efficiency diode
FS25R12W1T4PBPSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
