FF50R12RT4 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FF50R12RT4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
5
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree no
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X5
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn On Time
185 ns
Turn Off Time-Nom (toff)
490 ns
Collector-Emitter Voltage-Max
1200V
RoHS Status
RoHS Compliant
In-Stock:4249 items
FF50R12RT4 Product Details
Description
The FF50R12RT4 is a 34 mm 1200 V, 50 A dual IGBT module with fast TRENCHSTOP? IGBT4 and Emitter Controlled 4 Diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
Features
Tvj op = 150°C
VCEsat with positive Temperature Coefficient
Isolated Base Plate
Standard Housing
Extended Operation Temperature T vj op
Low Switching Losses
Low VCEsat
Applications
Motor control and drives
Uninterruptible Power Supply (UPS)
AC and DC motor drives offering speed control
Chopper and inverters
Solar inverters
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