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BSM50GB120DLCHOSA1

BSM50GB120DLCHOSA1

BSM50GB120DLCHOSA1

Infineon Technologies

BSM50GB120DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM50GB120DLCHOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~125°C
Pbfree Code no
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 460W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 115A
Turn On Time110 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Turn Off Time-Nom (toff) 370 ns
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:133 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$68.83800$688.38

BSM50GB120DLCHOSA1 Product Details

BSM50GB120DLCHOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

BSM50GB120DLCHOSA1 Applications

·Air Conditioning

·Motor Drives

·Servo Drives

·UPS Systems

BSM50GB120DLCHOSA1 Features

·Low Switching Losses

·Low VCEsat

·Trench IGBT 4

·VCEsatwith positive Temperature Coefficient

Mechanical Features

·AlzO Substrate with Low Thermal Resistance

·Compact design

·PressFIT Contact Technology

·Rugged Duplex frame construction


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