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FS100R12KT4GBOSA1

FS100R12KT4GBOSA1

FS100R12KT4GBOSA1

Infineon Technologies

FS100R12KT4GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS100R12KT4GBOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 35
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count35
JESD-30 Code R-XUFM-X35
Qualification StatusNot Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 515W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Turn On Time165 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Turn Off Time-Nom (toff) 570 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 6.3nF @ 25V
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:64 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$60.414480$60.41448
10$56.994792$569.94792
100$53.768672$5376.8672
500$50.725162$25362.581
1000$47.853927$47853.927

FS100R12KT4GBOSA1 Product Details

FS100R12KT4GBOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FS100R12KT4GBOSA1 Applications

Air Conditioning

Motor Drives

Servo Drives

UPS Systems

FS100R12KT4GBOSA1 Features

Increased blocking voltage capability to 650V

High Short Circuit Capability, Self Limiting ShortCircuit Current

Trench IGBT 4

Tvop = 150°C

Mechanical Features

Al2Os Substrate with Low Thermal Resistance

Compact design

PressFIT Contact Technology

Rugged Duplex frame construction


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