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FF450R33T3E3BPSA1

FF450R33T3E3BPSA1

FF450R33T3E3BPSA1

Infineon Technologies

FF450R33T3E3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF450R33T3E3BPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~150°C
Series XHP™3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 1000000W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 450A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 450A
IGBT Type Trench Field Stop
NTC ThermistorNo
RoHS StatusROHS3 Compliant
In-Stock:50 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FF450R33T3E3BPSA1 Product Details

FF450R33T3E3BPSA1 Description

FF450R33T3E3BPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF450R33T3E3BPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FF450R33T3E3BPSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FF450R33T3E3BPSA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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