FP50R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FP50R12KE3BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
24
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C TJ
Packaging
Bulk
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Number of Elements
7
Configuration
Single
Power Dissipation
270W
Case Connection
ISOLATED
Power - Max
280W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
75A
Turn On Time
135 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 50A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
NPT
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
3.5nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:76 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$112.46000
$112.46
FP50R12KE3BOSA1 Product Details
FP50R12KE3BOSA1 DESCRIPTION
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FP50R12KE3BOSA1 Applications
·Motor Drives
·Servo Drives
·UPS Systems
·Wind Turbines
FP50R12KE3BOSA1 Features
·Low VCEsat
·Tvjop=150℃
Mechanical Features
·Standard Housing
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