FP40R12KE3BOSA1 Description
FP40R12KE3BOSA1 is a 1200v IGBT-Modules. The FP40R12KE3BOSA1 can be applied in Automotive, Body electronics & lighting, Industrial, Electronic point of sale (EPOS), Personal electronics, and Gaming applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP40R12KE3BOSA1 is in the tray package with 165W Power dissipation.
FP40R12KE3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 55A
Repetitive peak collector current Tp = 1 ms: 80A
Total power dissipation Tc = 25°C: 210W
Gate-emitter peak voltage: ±20V
FP40R12KE3BOSA1 Applications
Automotive
Body electronics & lighting
Industrial
Electronic point of sale (EPOS)
Personal electronics
Gaming
