FF600R12IE4VBOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF600R12IE4VBOSA1 Applications
·High Power Converters
·Motor Drives
·Servo Drives
·UPS Systems
·Wind Turbines
FF600R12IE4VBOSA1 Features
·Low VCEsat
·Tvjop =150°℃
·VCEsat with positive Temperature Coefficient
Mechanical Features
·High Power Density
·lsolated Base Plate
·Standard Housing