FF400R33KF2CB3NOSA1 Description
FF400R33KF2CB3NOSA1 is a 3300v IGBT. The transistor FF400R33KF2CB3NOSA1 can be applied in Automotive, Infotainment & cluster, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF400R33KF2CB3NOSA1 is with 4kW power dissipation.
FF400R33KF2CB3NOSA1 Features
Continuous DC collector current:660A
Total power dissipation: TC=25℃: 4kW
Gate-emitter peak voltage: ±20V
Turn-off energy loss per pulse: 470mJ
Continuous DC forward current: 400A
FF400R33KF2CB3NOSA1 Applications
Automotive
Infotainment & cluster
Communications equipment
Datacom module
Personal electronics
Connected peripherals & printers
