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VS-GA200TH60S

VS-GA200TH60S

VS-GA200TH60S

Vishay Semiconductor Diodes Division

IGBT 600V 260A 1042W INT-A-PAK

SOT-23

VS-GA200TH60S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Operating Temperature-40°C~150°C TJ
Published 2015
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation1.042kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1042W
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 260A
Current - Collector Cutoff (Max) 5μA
Collector Emitter Breakdown Voltage600V
Input Capacitance13.1nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A (Typ)
NTC ThermistorNo
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13.1nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:3896 items

Pricing & Ordering

QuantityUnit PriceExt. Price
12$395.86583$4750.38996

About VS-GA200TH60S

The VS-GA200TH60S from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 600V 260A 1042W INT-A-PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GA200TH60S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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