FF225R12ME4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF225R12ME4BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
EconoDUAL™ 3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X11
Qualification Status
Not Qualified
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1050W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
320A
Turn On Time
220 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 225A
Turn Off Time-Nom (toff)
600 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
13nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
In-Stock:73 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$90.527200
$90.5272
10
$85.403019
$854.03019
100
$80.568886
$8056.8886
500
$76.008383
$38004.1915
1000
$71.706021
$71706.021
FF225R12ME4BOSA1 Product Details
FF225R12ME4BOSA1 Description
FF225R12ME4BOSA1 is a single IGBT with a break down voltage of 1200V from Infineon Technologies. FF225R12ME4BOSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 320A. The FF225R12ME4BOSA1 has 3 pins and it is available in Module packaging way. FF225R12ME4BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF225R12ME4BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
IGBT Type: Trench Field Stop
Input Capacitance (Cies) @ Vce: 13nF @ 25V
Voltage - Collector Emitter Breakdown (Max): 1200V
Operating Temperature: -40°C~150°C
FF225R12ME4BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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