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F3L15R12W2H3B27BOMA1

F3L15R12W2H3B27BOMA1

F3L15R12W2H3B27BOMA1

Infineon Technologies

F3L15R12W2H3B27BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

F3L15R12W2H3B27BOMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 34
Operating Temperature-40°C~150°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Configuration 3 Independent
Power - Max 145W
Halogen Free Not Halogen Free
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 20A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 875pF @ 25V
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:170 items

Pricing & Ordering

QuantityUnit PriceExt. Price
15$55.36000$830.4

F3L15R12W2H3B27BOMA1 Product Details

F3L15R12W2H3B27BOMA1 Description


F3L15R12W2H3B27BOMA1 is a 1200v IGBT-module. The Electric IGBT modules have been developed to be used as switching elements for the power converters of variable-speed drives for motors, uninterruptable power supplies, and others. An IGBT is a semiconductor device that combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor.



F3L15R12W2H3B27BOMA1 Features


Low inductive design

Low Switching Losses

Low VcEsat

Compact design

PressFIT Contact Technology

Rugged mounting due to integrated mounting

clamps



F3L15R12W2H3B27BOMA1 Applications


3-Level-Applications

Solar Applications

Industrial equipment


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