FF200R12KE4HOSA1 Description
FF200R12KE4HOSA1 is a 600v IGBT module. The FF200R12KE4HOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Datacom module, Enterprise systems, and Enterprise machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FF200R12KE4HOSA1 is in the tray package with 1100W Power dissipations.
FF200R12KE4HOSA1 Features
Collector-emitter voltage Tvj = 25°C: 600v
Continuous DC collector current TC = 25°C : 25A
Repetitive peak collector current Tp = 1 ms: 40A
Total power dissipation Tc = 25°C: 89W
Gate-emitter peak voltage: ±20V
FF200R12KE4HOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Datacom module
Enterprise systems
Enterprise machine
