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FF450R12KE4HOSA1

FF450R12KE4HOSA1

FF450R12KE4HOSA1

Infineon Technologies

FF450R12KE4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF450R12KE4HOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Number of Pins 7
Operating Temperature-40°C~150°C TJ
Published 2008
Series C
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Pin Count7
Number of Elements 2
Polarity NPN
Configuration Half Bridge
Element ConfigurationDual
Case Connection ISOLATED
Power - Max 2400W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 520A
Power Dissipation-Max (Abs) 2400W
Turn On Time325 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 450A
Turn Off Time-Nom (toff) 800 ns
IGBT Type Trench Field Stop
NTC ThermistorNo
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 28nF @ 25V
VCEsat-Max 2.15 V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:82 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$155.17000$155.17

FF450R12KE4HOSA1 Product Details

FF450R12KE4HOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FF450R12KE4HOSA1 Applications

·High Power Converters

·Motor Drives

·UPS Systems

FF450R12KE4HOSA1 Features

? Half-bridge

? Including fast free-wheeling diodes

? Package with insulated metal base plate

? RG on,min = 27 Ohm


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