FF1200R17KE3B2NOSA1 Description
FF1200R17KE3B2NOSA1 is a 1700v IGBT-Modules. The FF1200R17KE3B2NOSA1 can be applied in Industrial, Test & Measurement, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF1200R17KE3B2NOSA1 is in the tray package with 6.60kW Power dissipation.
FF1200R17KE3B2NOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1700v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 1700A
Repetitive peak collector current Tp = 1 ms: 2400A
Total power dissipation Tc = 25°C: 6.60W
Gate-emitter peak voltage: ±20V
FF1200R17KE3B2NOSA1 Applications
Industrial
Test & Measurement
Enterprise systems
Enterprise machine
Personal electronics
Tablets
