FD200R12PT4B6BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FD200R12PT4B6BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Three Phase Inverter
Power - Max
1100W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
15μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
300A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 200A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
12.5nF @ 25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:90 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$253.618490
$253.61849
10
$245.279004
$2452.79004
25
$243.573986
$6089.34965
50
$241.880820
$12094.041
100
$236.905799
$23690.5799
500
$219.968244
$109984.122
FD200R12PT4B6BOSA1 Product Details
FD200R12PT4B6BOSA1 Description
FD200R12PT4B6BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FD200R12PT4B6BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 300A. The FD200R12PT4B6BOSA1 has 3 pins and it is available in Module packaging way. FD200R12PT4B6BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FD200R12PT4B6BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 1200V
Input Capacitance (Cies) @ Vce: 12.5nF @ 25V
Current - Collector (Ic) (Max): 300A
Current - Collector Cutoff (Max): 15μA
FD200R12PT4B6BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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