FD200R12KE3HOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FD200R12KE3HOSA1 Applications
·High Power Converters
·Motor Drives
·UPS Systems
FD200R12KE3HOSA1 Features
? Half-bridge
? Including fast free-wheeling diodes
? Package with insulated metal base plate
? RG on,min = 27 Ohm
