FB10R06KL4BOMA1 Description
The FB10R06KL4BOMA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
FB10R06KL4BOMA1 Features
Electrical Features
Mechanical Features
Package with enhanced insulation of 10.4kV AC 10s
High creepage and clearance distances
Package with CTI > 600
AlSiC base plate for increased thermal cycling capability
Extended storage temperature down to Tstg = -55°C
FB10R06KL4BOMA1 Applications
