DD1200S12H4HOSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
DD1200S12H4HOSA1 Applications
·High power converters
·Motor drives
·Multi level inverter
·Wind turbines
DD1200S12H4HOSA1 Features
·Extended operating temperature Tvjop
Mechanical Features·4 kV AC 1min insulation
·Package with CTI>400
·High power density
·IHM B housing
