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SSM6J507NU,LF

SSM6J507NU,LF

SSM6J507NU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 10A 6UDFN

SOT-23

SSM6J507NU,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series U-MOSVI
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.25W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 20m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) +20V, -25V
Continuous Drain Current (ID) 10A
RoHS StatusRoHS Compliant
In-Stock:13300 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SSM6J507NU,LF

The SSM6J507NU,LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 30V 10A 6UDFN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SSM6J507NU,LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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