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BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

Infineon Technologies

MOSFET N-CH 40V 40A TSDSON-8

SOT-23

BSZ042N04NSGATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count8
JESD-30 Code R-PDSO-N5
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 69W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation69W
Case Connection DRAIN
Turn On Delay Time14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time3.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage40V
Drain-source On Resistance-Max 0.0042Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 150 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:2011 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.424080$4.42408
10$4.173660$41.7366
100$3.937415$393.7415
500$3.714543$1857.2715
1000$3.504286$3504.286

About BSZ042N04NSGATMA1

The BSZ042N04NSGATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 40V 40A TSDSON-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSZ042N04NSGATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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