Name: BS170G
Brand: ON Semiconductor
SKU: BS170G
Availability: InStock

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BS170G

Manufacturer part number:BS170G

Manufacturer:ON Semiconductor

Description:BS170G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:BS170G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating	Copper, Silver, Tin
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Surface Mount	NO
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	500mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 10V
Current - Continuous Drain (Id) @ 25°C	500mA Ta
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	4 ns
Continuous Drain Current (ID)	500mA
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.5A
Drain to Source Breakdown Voltage	60V
Nominal Vgs	2 V
Height	5.33mm
Length	5.2mm
Width	4.19mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

BS170G Product Details

BS170G Description

BS170G power MOSFETs, created by ON Semiconductor, are able to switch between data lines quickly and amplify the signals more quickly than conventional transistors. 350 mW is the most power it can dissipate. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C. The enhancement mode is used by this N channel MOSFET transistor.