Name: BSC014NE2LSIATMA1
Brand: Infineon Technologies
SKU: BSC014NE2LSIATMA1
Price: 1.95000 USD
Availability: InStock

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BSC014NE2LSIATMA1

Manufacturer part number:BSC014NE2LSIATMA1

Manufacturer:Infineon Technologies

Description:MOSFET OptiMOS Power MOSFET

Case Package:SOT-23

Datasheet:BSC014NE2LSIATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 74W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 12V
Current - Continuous Drain (Id) @ 25°C	33A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	25V
Drain-source On Resistance-Max	0.002Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	50 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About BSC014NE2LSIATMA1

The BSC014NE2LSIATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET OptiMOS Power MOSFET.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSC014NE2LSIATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.