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BSS169 E6327

BSS169 E6327

BSS169 E6327

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

SOT-23

BSS169 E6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Series SIPMOS®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 360mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 68pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 7V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.17A
FET Feature Depletion Mode
RoHS StatusRoHS Compliant
In-Stock:3826 items

About BSS169 E6327

The BSS169 E6327 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 170MA SOT-23.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSS169 E6327, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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