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BSP123E6327T

BSP123E6327T

BSP123E6327T

Infineon Technologies

MOSFET N-CH 100V 370MA SOT223

SOT-23

BSP123E6327T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series SIPMOS®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating380mA
Power Dissipation-Max 1.79W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V
Current - Continuous Drain (Id) @ 25°C 370mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 10V
Rise Time5ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 370mA
Input Capacitance70pF
Rds On Max 6 Ω
RoHS StatusNon-RoHS Compliant
Lead Free Lead Free
In-Stock:3072 items

About BSP123E6327T

The BSP123E6327T from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 370MA SOT223.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSP123E6327T, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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