BSM75GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM75GP60BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
310W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 75A
Turn Off Time-Nom (toff)
400 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
3.3nF @ 25V
RoHS Status
ROHS3 Compliant
In-Stock:2985 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$144.23600
$1442.36
BSM75GP60BOSA1 Product Details
BSM75GP60BOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
BSM75GP60BOSA1 Applications
·Motor Drives
·Servo Drives
·UPS Systems
·Wind Turbines
BSM75GP60BOSA1 Features
·Low VcEsat
·Tvjop=150℃
Mechanical Features
·Standard Housing
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