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VS-GB200TS60NPBF

VS-GB200TS60NPBF

VS-GB200TS60NPBF

Vishay Semiconductor Diodes Division

IGBT Modules 209 Amp 600 Volt Half-Bridge

SOT-23

VS-GB200TS60NPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Number of Pins 3
Operating Temperature-40°C~150°C TJ
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation781W
Polarity NPN
Configuration Half Bridge
Element ConfigurationDual
Power - Max 781W
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 209A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.6V
Vce(on) (Max) @ Vge, Ic 2.84V @ 15V, 200A
IGBT Type NPT
NTC ThermistorNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:1084 items

Pricing & Ordering

QuantityUnit PriceExt. Price
15$128.15467$1922.32005

About VS-GB200TS60NPBF

The VS-GB200TS60NPBF from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT Modules 209 Amp 600 Volt Half-Bridge.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GB200TS60NPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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