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BSM75GD120DN2BOSA1

  • BSM75GD120DN2BOSA1 - BSM75GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • BSM75GD120DN2BOSA1 - BSM75GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

BSM75GD120DN2BOSA1

BSM75GD120DN2BOSA1

Infineon Technologies

BSM75GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM75GD120DN2BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 39
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-XUFM-X39
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 520W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1.5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 103A
Turn On Time100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Turn Off Time-Nom (toff) 520 ns
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 5.1nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:74 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$177.41500$1774.15

BSM75GD120DN2BOSA1 Product Details

BSM75GD120DN2BOSA1 Description


Power Module for IGBT



BSM75GD120DN2BOSA1 Features


? Power module solderable


? Full 3-phase bridge


? Including quick-reverse diodes


? insulated metal base plate for the package



BSM75GD120DN2BOSA1 Applications


Switchinig applications


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